Formation of self-aligned source for split-gate non-volatile memory cell
作者： Chien-Sheng Su , Jeng-Wei Yang , Yueh-hsin Chen
DOI:
关键词: Substrate (electronics) 、 Silicon 、 Materials science 、 Electrical conductor 、 Optoelectronics 、 Nanotechnology 、 Trench 、 Non-volatile memory
摘要: A memory device having a pair of conductive floating gates with inner sidewalls facing each other, and disposed over insulated from substrate first conductivity type. spaced apart control one the gates, including other. spacers insulation material extending along gate gates. The are aligned side surfaces spacers. second extend sidewalls. trench formed into Silicon carbon in trench. Material implanted silicon forming region
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