Method of integrating FinFET CMOS devices with embedded nonvolatile memory cells
作者： Hieu Van Tran , Chien-Sheng Su , Chun-Ming Chen , Nhan Do , Jeng-Wei Yang
DOI:
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摘要: A method of forming a memory device with cells over planar substrate surface and FinFET logic devices fin shaped portions, including protective layer previously formed floating gates, erase word line poly source regions in cell portion the substrate, then fins into gates along removing completing formation from drain substrate.
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