Reduced Size Split Gate Non-volatile Flash Memory Cell And Method Of Making Same

摘要: A reduced size non-volatile memory cell array is achieved by forming first trenches in an insulation layer the row direction, filling with material, second column STI isolation material trenches, and source regions through trenches. Alternately, can be made continuous, diffusion implant has sufficient energy to form continuous line diffusions that each extend across active under regions. This allows control gates of adjacent pairs formed closer together.