Patterning method and method of forming memory device
作者： Jen-Hsiang Tsai
DOI:
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摘要: A method of forming memory device is provided. substrate having at least two cell areas and one peripheral area between the target layer, a sacrificed layer first mask patterns in second are sequentially formed on substrate. Sacrificed partially removed to form by using as mask. Spacers sidewalls patterns. The spacers removed. areas. Target removed, remaining mask, word lines select gates portion adjacent area.
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