Semiconductor device and method of double photolithography process for forming patterns of the semiconductor device

摘要: A semiconductor device and a method of forming patterns on are disclosed. The may include high-density with minimum size that be less the resolution limit photolithography process, have substrate including memory cell region an adjacent connection region, plurality first conductive lines extending from to in direction, second connected respective pads having width equal twice each lines. two levels spacer formation provide sub line widths spaces as well selected multiples spaces.