METHOD OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE

摘要: PURPOSE: A pattern formation method of a semiconductor device is provided to control the fault generation profile by forming subsidiary in front side second region order eliminate step difference relatively wide patterns. CONSTITUTION: An etching object film(102), hard mask film, and first sub-layer are successively formed on substrate(100). assistant pattern(108a) patterning cell while peripheral circuit remains. spacer layer(112) along surface film exposed with lower temperature than that transformed. film(114) top layer. The layer remaining sidewall space so exposed. patterned according pattern, pattern.