Non-volatile memory devices including shared bit lines and methods of fabricating the same

摘要: Provided are non-volatile memory devices and methods of fabricating the same, including improved bit line contact formation that may reduce resistance parasitic capacitance, thereby reducing manufacturing costs improving device performance. The include a substrate; plurality field regions formed on substrate, each homogeneous first second is divided into two sub via bridge region; an active region substrate defined as having string structure by regions, where at least strings be connected one regions; shared lines to contacts, contacts direct contacts.