作者: Craig Roderick , John Trow , Kenneth Collins , Viktor Shel , Douglas Buchberger
DOI:
关键词: RF probe 、 Impedance bridging 、 Impedance matching 、 RF power amplifier 、 Electrical engineering 、 Image impedance 、 Input impedance 、 Quarter-wave impedance transformer 、 Output impedance 、 Engineering
摘要: The invention is embodied in an RF plasma reactor for processing a workpiece region within chamber of the reactor, including power applicator facing and having input terminal, generator fundamental frequency output terminal, an impedance match network connected between generator output terminal input of RF power applicator, impedance at fundamental frequency related generally to a complex conjugate load measurable looking toward applicator, and harmonic element the impedance of the element having the fundamental which higher than frequency, whereby to isolate frequencies generated a plasma sheath near electrode from match network.