Preparation of Zn(In)Se films from alloyed precursors
作者： R Jeyakumar , S.T Lakshmikumar , A.C Rastogi
DOI: 10.1016/S0025-5408(01)00686-9
关键词: Doping 、 Thin film 、 Crystallinity 、 Analytical chemistry 、 Mineralogy 、 Substrate (electronics) 、 Evaporation (deposition) 、 Zinc 、 Materials science 、 Indium 、 Electrical resistivity and conductivity
摘要: Abstract Single-phase cubic Zn(In)Se thin film growth by Se vapor selenization of Zn(In) alloy precursors films is described. Depositing the precursor at higher substrate temperatures changes In/Zn composition and also yields highly crystalline films. The ratio in selenized comparison to that due differential kinetics complex In–Se Zn–Se reaction chemistry. resistivity depends on ratio. Initially, increases with increased indium incorporation defect concentration then decreases ratios because lower grain-boundary effects reduced trap density owing improvement crystallinity. Treatment vapor-phase Zn compensates for vacancies film, reduces electrically inactive defects, doping efficiency, thereby lowering resistivities ∼1 Ω cm. Hot-probe thermoelectric power measurements show all low resistive ZnSe are n-type.
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