Activation of shallow dopants in II–VI compounds
作者： W. Walukiewicz
DOI: 10.1016/0022-0248(95)00839-X
关键词: Band gap 、 Dopant 、 Electronic band structure 、 Chemical physics 、 Ternary operation 、 Dopant Activation 、 Mineralogy 、 Chemistry 、 Fermi level 、 Band offset 、 Doping
摘要: Abstract The amphoteric native defect model is applied to the understanding of variations in dopant activation efficiency II–VI compounds. It shown that location common energy reference, Fermi level stabilization energy, relative band edges can be used determine doping induced reduction formation and enhancement concentration compensating defects. most extensively studied compound semiconductors as well ternary quaternary alloys.
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