Temperature-dependent electrical properties of HgSe
作者： S. L. Lehoczky , J. G. Broerman , Donald A. Nelson , Charles R. Whitsett
关键词: Materials science 、 Band gap 、 Optoelectronics 、 Direct and indirect band gaps 、 Semimetal 、 Condensed matter physics
摘要: … mobilitydata for HgSe for the temperature range from 4.to 300 K and for samples with net … concentrations from sample to sample for similar annealing treatments may be indicative of the …
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