Radiation hardness evaluation of thin film ferroelectric capacitors
作者： J. A. Bullington , L. J. Schwee , T. F. Wrobel
DOI:
关键词: Radiation hardening 、 Electronic engineering 、 Materials science 、 Ferroelectric capacitor 、 Irradiation 、 Capacitor 、 Breakdown voltage 、 Thin film 、 Fission 、 Analytical chemistry 、 Ferroelectricity
摘要: Ferroelectric capacitor structures have been evaluated in total dose, dose-rate and cosmic ray environments. The capacitors were found to maintain polarization following an exposure of approx.5 Mrad (Si), approx.1 x 10/sup 11/ rad(Si)/s approx.6 6/ Cf-252 fission fragments per cm/sup 2/. show minimal degradation the P versus E hysteresis curve approx.10 Mrad(Si), In addition, no heavy ion induced hard errors observed for bias levels below intrinsic breakdown voltage 20 V.
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