An experimental 512-bit nonvolatile memory with ferroelectric storage cell
作者： J.T. Evans , R. Womack
DOI: 10.1109/4.5940
关键词:
摘要: … Q(1) written in it by its hgh bit-line voltage. V,,,, is derived directly … the photograph of the 512 ECD bit-line signals in Fig. … to the drive line with the bit lines floating and the sense amp OFF. …
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sci-hub.se 参考文章(1)
J. A. Bullington, L. J. Schwee, T. F. Wrobel, Radiation hardness evaluation of thin film ferroelectric capacitors NASA STI/Recon Technical Report N. ,vol. 88, pp. 15147- ,(1987)