Physical and Metallorganic Chemical Vapor Deposition of Ferroelectric Thin Films for Nonvolatile Memories

摘要: Publisher Summary This chapter reviews film synthesis techniques, including sputter deposition, laser ablation and metallorganic chemical vapor deposition (MOCVD). They represent the most utilized methods in relation to science technology of ferroelectric thin films. These techniques can produce films with device-quality characteristics. However, various requirements are necessary for application manufacturable processes. Another major subfield research related hetero-structures involves development materials integration strategies capacitors memory-compatible properties their semiconductor devices fabricate non-volatile-ferro-electric random access memory (NVFRAM). Therefore, another focus this is on production incorporation into wafers fabrication NVFRAMs. The extensive basic applied performed field characterization films, particularly PZT SBT, has advanced basis these manufacturing film-based such as nonvolatile memories. Fatigue been practically eliminated from PZT-based capacitors, using metal-oxide electrodes, while measurements polarization retention have also yielded values compatible a reliable operation Physical plasma ion beam pulsed at forefront multicomponent oxide