Damage profiles of Si (001) surface via Ar cluster beam sputtering
作者： Yong Koo Kyoung , Hyung Ik Lee , Jae Gwan Chung , Sung Heo , Jae Cheol Lee
DOI: 10.1002/SIA.4917
关键词: Atomic physics 、 Sputtering 、 Cluster (physics) 、 Layer (electronics) 、 Ion 、 Analytical chemistry 、 Scattering 、 X-ray photoelectron spectroscopy 、 Chemistry 、 Beam (structure) 、 Argon
摘要: Damage profiles on Si (001) surface via argon gas cluster ion beam sputtering and mono-atomic were investigated using medium energy scattering. The thickness damaged by Ar was approximately 10 nm for 20 keV, 6.4 4.2 5 keV the composition of implanted atoms 0.2 at% 0.1 both keV. 5.3 1 8.5 2 12 3 maximum concentration in substrate 5.5 5.8 7.8 depth layers after is proportional to in-depth distribution primary ions. layer did not depend because are negligible. Understanding details about damage process can be useful practical analysis. Copyright © 2012 John Wiley & Sons, Ltd.
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