作者: Daniel W. Youngner , Chris J. Finn
DOI:
关键词: Semiconductor device 、 Electronic engineering 、 Integrated circuit 、 Layer (electronics) 、 Getter 、 Contamination 、 Ion 、 Materials science 、 Semiconductor 、 Photoresist 、 Optoelectronics
摘要: The present invention provides a method of protecting semiconductor integrated circuit from mobile ion contamination. In one embodiment gettering agent is implanted into dielectric layer. an alternative photoresist layer which ashed in oxygen based plasma, leaving the on surface underlying photoresist.