Method for improving reflow of phosphosilicate glass by arsenic implantation
作者： Devereaux C. Chen , Horng-Sen Fu
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摘要: A method of making improved step metal coverage semiconductor device using enhanced reflow phosphosilicate glass by ion implantation arsenic at low temperature is provided. In one embodiment, the fabrication processing includes implanting into and reflowing implanted heating to smooth phosphosiliate for allowing a interconnection.
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