High-gain quantum-dot infrared photodetector
作者： V.V. Mitin , V.I. Pipa , A.V. Sergeev , M. Dutta , M. Stroscio
DOI: 10.1016/S1350-4495(01)00107-4
关键词: Materials science 、 Tunnel effect 、 Photoconductivity 、 Operating temperature 、 Ground state 、 Responsivity 、 Rectangular potential barrier 、 Quantum dot 、 Optics 、 Optoelectronics 、 Photodetector
摘要: An innovative idea in design of sensitive quantum-dot (QD) infrared photodetector is to use a structure with QDs surrounded by repulsive potential barriers which are created due interdot doping. Spatial separation the localized ground state and continuum conducting states electron increases significantly photoelectron capture time photoconductive gain. Large value gain results high responsivity, turn improves detectivity raises device operating temperature.
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S. Wang, X. G. Xie, S. J. Xu, S. J. Chua, T. Mei, X. C. Wang, X. H. Zhang, G. Karunasiri, W. J. Fan, C. H. Wang, J. Jiang, Characteristics of InGaAs quantum dot infrared photodetectors Applied Physics Letters. ,vol. 73, pp. 3153- 3155 ,(1998) , 10.1063/1.122703
D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, P. M. Petroff, Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces Applied Physics Letters. ,vol. 63, pp. 3203- 3205 ,(1993) , 10.1063/1.110199
L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, G. Le Roux, Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices Applied Physics Letters. ,vol. 47, pp. 1099- 1101 ,(1985) , 10.1063/1.96342
J. Phillips, K. Kamath, P. Bhattacharya, Far-infrared photoconductivity in self-organized InAs quantum dots Applied Physics Letters. ,vol. 72, pp. 2020- 2022 ,(1998) , 10.1063/1.121252
S.-W. Lee, K. Hirakawa, Y. Shimada, Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures Applied Physics Letters. ,vol. 75, pp. 1428- 1430 ,(1999) , 10.1063/1.124715
D. Klotzkin, X. Zhang, P. Bhattacharya, C. Caneau, R. Bhat, Carrier dynamics in high-speed (f/sub -3 dB/>40 GHz) 0.98-μm multiquantum-well tunneling injection lasers determined from electrical impedance measurements IEEE Photonics Technology Letters. ,vol. 9, pp. 578- 580 ,(1997) , 10.1109/68.588116
L. Chu, A. Zrenner, G. Böhm, G. Abstreiter, Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots Applied Physics Letters. ,vol. 75, pp. 3599- 3601 ,(1999) , 10.1063/1.125400
U. Bockelmann, G. Bastard, PHONON SCATTERING AND ENERGY RELAXATION IN TWO-, ONE-, AND ZERO-DIMENSIONAL ELECTRON GASES Physical Review B. ,vol. 42, pp. 8947- 8951 ,(1990) , 10.1103/PHYSREVB.42.8947
P. Tribolet, J.P. Chatard, P. Costa, A. Manissadjian, Progress in HgCdTe homojunction infrared detectors Journal of Crystal Growth. pp. 1262- 1271 ,(1998) , 10.1016/S0022-0248(98)80263-7
B. F. Levine, Quantum‐well infrared photodetectors Journal of Applied Physics. ,vol. 74, ,(1993) , 10.1063/1.354252