Uncooled nanoscale infrared high-speed sensors for missile seeker applications

摘要: Multicolor capabilities, high detectivity, and quick response are highly important for advanced infrared sensor systems. Photodiodes made of narrow-band semiconductors widely used in such applications. However, the photodiodes require cryogenic temperatures expensive. Less expensive uncooled bolometric detectors less sensitive, significantly slower, have no multicolor capability. In order to overcome abovementioned obstacles, we been developing consisting a dielectric rod antenna (DRA) conjunction with nanoscale metalinsulator- metal (MIM) tunnel diode. these assemblies, DRA amplifies incident electromagnetic radiation, and the induced frequency voltage is rectified by MIM diode connected between ground electrically conductive plate, thus transforming energy into useful electrical signal. Because the antenna's directional selectivity using an having extremely low tunneling time nanometer size contact area, detector can respond at terahertz frequencies room temperature. It has been shown that DRAs made resistivity silicon posses loss enhanced gain long wavelengths. The proposed approach demonstrates inherent benefits device manufacturing technique compatible with existing CMOS technology, which may lead design cost sensors and/or arrays use military and commercial