Oxygen lone-pair states near the valence band edge of aluminum oxide thin films
作者： Z. W. Zhao , B. K. Tay , Chang Q. Sun , V. Ligatchev
DOI: 10.1063/1.1686905
关键词: Molecular physics 、 Oxide 、 Raman spectroscopy 、 Materials science 、 Thin film 、 Lone pair 、 Electrical resistivity and conductivity 、 Analytical chemistry 、 Deep-level transient spectroscopy 、 Annealing (metallurgy) 、 Absorption spectroscopy
摘要: Deep level transient spectroscopy and optical absorption measurement revealed three outstanding features of density-of-states (DOS) appeared above the valence band edge (Ev) Al oxide thin films. The broad peak located at 0.39 eV Ev disappears while other two 1.0 1.3 shift in position attenuate intensity upon annealing 200 °C. latter peaks are removed by temperature up to 400 °C. observed midgap DOS feature dynamics is accordance with oxygen lone pair as confirmed earlier Raman low-frequency ranges [C. Q. Sun et al., J. Appl. Phys. 90, 2615 (2001)] thermal desorption measurements surfaces.
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