Stark-ladder transition in a type-II (GaAs) 8 /(AlAs) 8 superlattice

作者: M Yamaguchi , H Nagasawa , M Morifuji , K Taniguchi , C Hamaguchi

DOI: 10.1088/0268-1242/9/10/010

关键词: ChemistrySpectral lineElectric fieldSuperlatticeCondensed matter physicsAtomic physicsConduction bandValence bandSpectroscopyStark effectElectron

摘要: The Stark-ladder transitions in a type-II (GaAs)8/(AlAs)8 superlattice are investigated under various uniform electric fields by using electroreflectance spectroscopy. spectra suggest the existence of transition from heavy-hole state Gamma valence band to electron X conduction band. Stark ladders miniband show strong mixing with miniband. experimental data measurements compared theoretical calculation based on tight-binding method, and reasonable agreement is found.

参考文章(24)
D. M. Whittaker, M. S. Skolnick, G. W. Smith, C. R. Whitehouse, Wannier-Stark localization of X and Gamma states in GaAs-AlAs short-period superlattices. Physical Review B. ,vol. 42, pp. 3591- 3598 ,(1990) , 10.1103/PHYSREVB.42.3591
T. Matsuoka, T. Nakazawa, T. Ohya, K. Taniguchi, C. Hamaguchi, H. Kato, Y. Watanabe, Zone-folding effect in short-period (GaAs)n/(AlAs)n superlattices with n in the range 3-15. Physical Review B. ,vol. 43, pp. 11798- 11805 ,(1991) , 10.1103/PHYSREVB.43.11798
Francisco Vera, Ivan Schmidt, Helicity and the Aharonov-Bohm effect. Physical Review D. ,vol. 42, pp. 3591- 3593 ,(1990) , 10.1103/PHYSREVD.42.3591
F. Agulló-Rueda, E. E. Mendez, J. M. Hong, Quantum coherence in semiconductor superlattices Physical Review B. ,vol. 40, pp. 1357- 1360 ,(1989) , 10.1103/PHYSREVB.40.1357
M. Yamaguchi, M. Morifuji, H. Kubo, K. Taniguchi, C. Hamaguchi, C. Gmachl, E. Gornik, Stark-ladder transitions in GaAs/AlGaAs superlattices Solid-state Electronics. ,vol. 37, pp. 839- 842 ,(1994) , 10.1016/0038-1101(94)90309-3
Masahito Yamaguchi, Masato Morifuji, Hitoshi Kubo, Kenji Taniguchi, Chihiro Hamaguchi, Claire F. Gmachl, Erich Gornik, Stark ladder transition of GaAs/AlGaAs superlattices in high-energy region Physical Concepts and Materials for Novel Optoelectronic Device Applications II. ,vol. 1985, pp. 608- 617 ,(1993) , 10.1117/12.162810
P. Voisin, J. Bleuse, C. Bouche, S. Gaillard, C. Alibert, A. Regreny, Observation of the Wannier-Stark quantization in a semiconductor superlattice. Physical Review Letters. ,vol. 61, pp. 1639- 1642 ,(1988) , 10.1103/PHYSREVLETT.61.1639
A. J. Shields, P. C. Klipstein, M. S. Skolnick, G. W. Smith, C. R. Whitehouse, Stark-ladder behavior of the X levels in a type-II GaAs/AlAs superlattice measured using electroreflectance spectroscopy. Physical Review B. ,vol. 42, pp. 5879- 5882 ,(1990) , 10.1103/PHYSREVB.42.5879
C Hamaguchi, T Fujii, M Morifuji, Y Nishikawa, Electronic band structure of superlattices under a uniform electric field and Wannier-Stark effect Semiconductor Science and Technology. ,vol. 7, pp. 1047- 1051 ,(1992) , 10.1088/0268-1242/7/8/004