Electronic band structure of superlattices under a uniform electric field and Wannier-Stark effect
作者： C Hamaguchi , T Fujii , M Morifuji , Y Nishikawa
DOI: 10.1088/0268-1242/7/8/004
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摘要: The electronic band structures of GaAs/(GaAl)As superlattices under a uniform electric field along the growth axis are calculated on basis microscopic tight-binding (TB) description. Finite sets quantum wells considered in order to apply TB method system without translational symmetry. main effect appears as diagonal elements matrix, resulting modulation miniband dispersion and localization wavefunctions (Wannier-Stark effect). results found be good agreement with experimental observation by electroreflectance measurements.
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