Forced diffusion via electrically induced crystallization for fabricating ZnO–Ti–Si structures
作者： Yen-Ting Chen , Fei-Yi Hung
DOI: 10.1016/J.MATERRESBULL.2014.07.028
关键词: Intermetallic 、 Electrical resistance and conductance 、 Thin film 、 Crystallization 、 Materials science 、 Electron transmission 、 Composite material 、 Annealing (metallurgy) 、 Crystallography 、 Transmission electron microscopy 、 Crystal growth
摘要: Abstract Electrically induced crystallization (EIC) is a recently developed process for material modification. This study applied to EIC fabricate ZnO–Ti–Si multi-layer structures of various thicknesses dope Ti into ZnO thin film and form TiSi x intermetallic compound (IMC) in single step. The IMC layer was confirmed using transmission electron microscopy images. thickness more than 40 nm, which enhanced decreased the total electrical resistance structure. Finally, diffusion mechanisms annealing were investigated. shows that has potential industrial applications.
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