Crystallization Mechanism and Raman Characteristics of ZnO/In/ZnO Thin Film Using an Electrical Current Method
作者： Fei-Yi Hung
DOI: 10.2320/MATERTRANS.M2010361
关键词: Direct current 、 Raman spectroscopy 、 Optoelectronics 、 Thin film 、 Electrical resistance and conductance 、 Crystallization 、 Materials science 、 Sputtering 、 Thermoelectric effect 、 Substrate (electronics)
摘要: ZnO/In/ZnO tri-layer thin films were designed and fabricated by RF sputtering on copolymer substrate. Under an electrical current, the thermoelectric effect of direct current (DC) reduced resistance improved crystallization Raman properties. Also, indium atoms had migrated into ZnO matrix a diffusion layer in ZnO/In interface grown. The induced temperature is ∼140°C substrate suffers no damage so can be applied to low optoelectronic devices.
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