Microstructures, optical and electrical properties of In-doped ZnO thin films prepared by sol–gel method
作者： K.J. Chen , F.Y. Hung , S.J. Chang , Z.S. Hu
DOI: 10.1016/J.APSUSC.2009.02.007
关键词:
摘要: Abstract ZnO and indium-doped (I x ZO) thin films were prepared on silica–glass substrates by the sol–gel method. The crystallized at 600 °C 700 °C for 1 h in 6.9 × 10 −1 Torr under pure O 2 atmosphere. analyzed results compared to investigate structural characteristics optical properties. surface morphology of I ZO was different from that films, showed a overlay structure. In addition, crystallization film depleted higher temperatures. From XRD analysis, possessed hexagonal structures. Notably, micro-In 3 phases observed using EDS. Both mechanism not only improved peeling structure, but also electrical conductivity films. For PL spectrum, property raised temperature. Although reduced defects film, effect residual 3+ enhanced completely
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