ZnO-Based Light-Emitting Diodes
作者： J.C. Fan , S.L. Chang , Z. Xie
DOI: 10.5772/51181
关键词: Semiconductor 、 Light-emitting diode 、 Optoelectronics 、 Fabrication 、 Wide-bandgap semiconductor 、 Direct and indirect band gaps 、 Wurtzite crystal structure 、 Quantum well 、 Diode 、 Materials science
摘要: In the past decade, light-emitting diodes (LEDs) based on wideband gap semiconductor have attracted considerable attention due to its potential optoelectronic applications in illu‐ mination, mobile appliances, automotive and displays [1]. Among available wide band semiconductors, zinc oxide, with a large direct of 3.37eV, is promising can‐ didate because characteristic features such as exciton binding energy 60meV, realization engineering create barrier layers quantum wells little lattice mismatch. ZnO crystallizes wurtzite structure, same GaN, but, contrast, single crystal can be fabricated [2]. Furthermore, inexpensive, chemically stable, easy prepare etch, nontoxic, which also make fabrication ZnO-based optical devices an attractive prospect. The commercial success GaN-based op‐ toelectronic electronic trig interest [2-4].
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