Electroluminescence emission from light-emitting diode of p-ZnO/"InGaN/GaN… multiquantum well/n-GaN
作者： Tae-Young Park , Yong-Seok Choi , Sang-Mook Kim , Gun-Young Jung , Seong-Ju Park
DOI: 10.1063/1.3601915
关键词: Wide-bandgap semiconductor 、 Annealing (metallurgy) 、 Light-emitting diode 、 Fabrication 、 Diode 、 Optoelectronics 、 Thin film 、 Materials science 、 Doping 、 Electroluminescence
摘要: We report on the fabrication and characteristics of light-emitting diodes (LEDs) which consist antimony (Sb) doped p-ZnO, (InGaN/GaN) multiquantum well (MQW), n-GaN. An electroluminescence (EL) emission at a wavelength 468 nm is observed from hybrid LEDs after thermal annealing 750 °C, showing that Sb-doped p-ZnO can be used as hole supplying layer in LEDs. Furthermore, EL peaks are redshifted injection current increased, indicating compressive strain MQW layers relaxed due to layer.
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