The ZnO p-n homojunctions modulated by ZnMgO barriers
作者： Jing-Jing Yang , Qing-Qing Fang , Dan-Dan Wang , Wen-Han Du
DOI: 10.1063/1.4917178
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摘要: In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB). The ADB homojunctions displays step-like curve in absorption spectrums, is first time that quantum confinement effect has been observed spectrums at room temperature (RT). Hall-effect data confirm there 2-dimensional electron gas interface of junctions. enhances hall-mobility μ to 103 cm2V −1s−1 based on polarity films. There was no rectification property with thickness 250nm, however, when added n-type layer it a typical Zener diode I-V curve.
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