Comparison of time-related electrical properties of PN junctions and Schottky diodes for ZnO-based betavoltaic batteries
作者： Xiao-Yi Li , Jing-Bin Lu , Ren-Zhou Zheng , Yu Wang , Xu Xu
DOI: 10.1007/S41365-020-0723-Y
关键词: Diode 、 Energy conversion efficiency 、 Materials science 、 Optoelectronics 、 Schottky diode 、 Semiconductor 、 Betavoltaics 、 Electrical performance
摘要: Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries, which 0.101121 Ci 63Ni was selected the beta source. The time-related electrical properties obtained using Monte Carlo simulations. For n-type ZnO, Pt/ZnO diode had highest conversion efficiency, Ni/ZnO largest Isc. overall performance of is better than that diodes. lifetimes are longer for other devices, coming close to those junctions. Considering easier fabricate independent p-type semiconductors, offer alternatives PN-junction-based batteries.
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