63Ni schottky barrier nuclear battery of 4H-SiC

摘要: The design, fabrication, and testing of a 4H-SiC Schottky betavoltaic nuclear battery based on MEMS fabrication technology are presented in this paper. It uses diode with an active area 3.14 mm2 to collect the charge from 4 mCi/cm2 63Ni source. Some critical steps process integration for fabricating silicon carbide-based were addressed. A prototype was fabricated tested under illumination source activity 0.12 mCi. An open circuit voltage (V OC) 0.27 V short current density (J SC) 25.57 nA/cm2 measured. maximum output power (P max) 4.08 nW/cm2 conversion efficiency (η) 1.01% is obtained. performance expected be significantly improved by using larger optimizing design processing battery. By achieving comparable previously constructed p–n or p–i–n junction energy structures, barrier proves feasible approach achieve practical betavoltaics.