Effect of O5+ ion implantation on the electrical and structural properties of Cu nanowires
作者： R. P. Chauhan , Pallavi Rana
DOI: 10.1007/S10967-014-3262-3
关键词:
摘要: Ion beam creates changes in the material along their track, not only embody excellent properties but also tailor new materials. When ions are implanted into nanomaterials, they collide with target atoms and interact through three different phenomena; electron collision, nuclear collision charge exchange. In present study, 1 MeV O5+ were copper nanowires of diameter 80 nm synthesized using template synthesis approach. Electrical structural recorded Keithley 2400 series source meter Rigaku X-ray diffractometer respectively, before after implantation. I–V characteristics showed ohmic behavior enhancement conductivity No damage was revealed by XRD spectra. The work done can be viewed as a positive aspect implantation metallic especially Cu may utilized to fabricate nanodevices.
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