Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates

摘要: Abstract When Ti is deposited on Si in the 600–700°C temperature range, lattice mismatch between Ti-containing deposit and substrate causes TiSi x nanoislands to form. The grow when annealed at temperatures above 800°C. (either unannealed or annealed) are exposed a Si-containing precursor gas, catalyzes decomposition of allowing one-dimensional nanowires grow. If oxide-patterned substrates used, islands form selectively preferentially positioned near pattern edges. subsequently grown are, therefore, with respect larger lithographically formed pattern. Exposing wires an ion beam after deposition promotes parallel alignment nanowires.