Impact of rapid thermal annealing on structural and electrical properties of ZnO thin films grown atomic layer deposition on GaAs substrates
作者： Yuan Zhang , Hong-Liang Lu , Yang Geng , Qing-Qing Sun , Shi-Jin Ding
DOI: 10.1016/J.VACUUM.2013.11.004
关键词:
摘要: Abstract The effect of rapid thermal annealing temperature on the structural and electrical properties thin ZnO films grown GaAs substrate by atomic layer deposition is thoroughly investigated. X-ray diffraction analysis show that atoms interdiffusion can be observed at interface ZnO/GaAs heterostructures after in oxygen ambience elevated temperatures. Moreover, conductivity film converts from n- to p-type 600 °C. A hole concentration as high 3.4 × 1020 cm−3 also obtained for sample annealed 650 °C. attributed arsenic diffusion into shallow acceptors.
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