Visual-infrared electroluminescence emission from ZnO∕GaAs heterojunctions grown by metal-organic chemical vapor deposition
作者： Guotong Du , Yongguo Cui , Xia Xiaochuan , Xiangping Li , Huichao Zhu
DOI: 10.1063/1.2748093
关键词: Light-emitting diode 、 Electroluminescence 、 Heterojunction 、 Analytical chemistry 、 Chemical vapor deposition 、 Diode 、 Wide-bandgap semiconductor 、 X-ray photoelectron spectroscopy 、 Optoelectronics 、 Materials science 、 Doping
摘要: The light-emitting diode of p-ZnO∕n-GaAs heterojunction was grown by metal-organic chemical vapor deposition. p-ZnO films have been formed the doping As atoms which diffuse into ZnO film from GaAs substrate. p-type behavior As-doped based on p-ZnO∕n-GaAs, p-ZnO∕p-GaAs studied carrying out I-V measurements and x-ray photoelectron spectroscopy. characteristic showed rectifying visual-infrared electroluminescence emission under forward current injection at room temperature. heterounction had a threshold voltage ∼2.5V.
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