Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition
作者： D. J. Rogers , F. Hosseini Teherani , T. Monteiro , M. Soares , A. Neves
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摘要: In this work we investigated ZnO films grown on semi-insulating (100) GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X-ray diffraction (XRD), scanning electron microscopy, atomic force Raman spectroscopy, temperature dependent photoluminescence, C-V profiling and Hall measurements. The measurements showed a clear p-type response with relatively high mobility (∼260 cm2/V s) carrier concentration of ∼1.8 × 1019 cm–3. confirmed response. XRD spectroscopy indicated the presence (0002) oriented wurtzite plus secondary phase(s) (101) Zn2As2O7. results suggest that significant mixing was occurring at film/substrate interface for substrate temperatures 450 oC (without post-annealing). (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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