Structural and resistance switching properties of ZnO/SrTiO3/GaAs heterostructure grown by laser molecular beam epitaxy
作者： W Huang , JY Dai , JH Hao , None
DOI: 10.1063/1.3505136
关键词: Materials science 、 Heterojunction 、 Gallium arsenide 、 Inorganic chemistry 、 Semiconductor 、 Optoelectronics 、 Thin film 、 Substrate (electronics) 、 Epitaxy 、 Molecular beam epitaxy 、 Dielectric
摘要: ZnO thin films were epitaxially grown on (001) GaAs substrate by laser molecular beam epitaxy with SrTiO3 (STO) as a buffer layer. The interface properties of ZnO/GaAs heterostructure are greatly improved inserting STO interfacial effects the transport and dielectric characteristics have been investigated. current-voltage characteristic reveals an asymmetric resistance switching behavior, exhibiting temperature-dependent hysteresis in temperature range 50–300 K. These measured could be attributed to charge effect at heterostructure.
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