GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
作者： P. D. Ye , B. Yang , K. K. Ng , J. Bude , G. D. Wilk
DOI: 10.1063/1.1861122
关键词:
摘要: We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric. Compared to conventional (HEMT) of similar design, MOS-HEMT exhibits several orders magnitude lower leakage and times higher breakdown voltage channel current. This implies that ALD Al2O3∕AlGaN interface is high quality Al2O3∕AlGaN∕GaN potential for high-power rf applications. In addition, high-quality dielectric allows effective two-dimensional (2D) electron mobility at AlGaN∕GaN heterojunction be measured under transverse field. The resulting 2D much than typical Si, GaAs or InGaAs field-effect-transistors (MOSFETs).
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