Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.
作者： Dmitry M. Zhernokletov , Muhammad A. Negara , Rathnait D. Long , Shaul Aloni , Dennis Nordlund
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摘要: … The lowest interfacial trap density at energies in the upper … 3 interfacial layer by NH 4 OH (aq) exposure prior to ALD results in fewer interface traps after Al 2 O 3 deposition on the GaN …
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