作者: Jiejie Zhu , Qing Zhu , Lixiang Chen , Bin Hou , Ling Yang
关键词: Thermal stability 、 Analytical chemistry 、 Optoelectronics 、 Gate stack 、 Transistor 、 Materials science 、 Etching (microfabrication) 、 Transconductance 、 Voltage shift 、 Wide-bandgap semiconductor 、 Phonon scattering
摘要: This paper studied the recess-etching effects on temperature-dependent characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with Al2O3/AlN gate-stack. The 12.6 nm resulted in voltage shift capacitance-voltage curves by 2.4 V, improved peak field-effect mobility ( $\mu _{\text {FE}})$ from 1906 to 2036 cm2/ $\text{V}\cdot \text{s}$ , and increased transconductance ${g}_{\text {max}})$ 272 353 mS/mm. measu-rement 298 473 K showed decrease maximum drain current, {max}}$ {FE}}$ for both devices without recess etching, attributed thermal electron emission carrier depletion effects. Recess etching did not degrade stability distribution transport properties. Temperature-dependent analysis revealed that optical phonon scattering dominated mechanism Al2O3/AlN/ MIS-HEMTs. Optical energy 74 77 meV were obtained respectively.