Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al 2 O 3 /AlN Gate-Stack

作者: Jiejie Zhu , Qing Zhu , Lixiang Chen , Bin Hou , Ling Yang

DOI: 10.1109/TED.2017.2657780

关键词: Thermal stabilityAnalytical chemistryOptoelectronicsGate stackTransistorMaterials scienceEtching (microfabrication)TransconductanceVoltage shiftWide-bandgap semiconductorPhonon scattering

摘要: This paper studied the recess-etching effects on temperature-dependent characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with Al2O3/AlN gate-stack. The 12.6 nm resulted in voltage shift capacitance-voltage curves by 2.4 V, improved peak field-effect mobility ( $\mu _{\text {FE}})$ from 1906 to 2036 cm2/ $\text{V}\cdot \text{s}$ , and increased transconductance ${g}_{\text {max}})$ 272 353 mS/mm. measu-rement 298 473 K showed decrease maximum drain current, {max}}$ {FE}}$ for both devices without recess etching, attributed thermal electron emission carrier depletion effects. Recess etching did not degrade stability distribution transport properties. Temperature-dependent analysis revealed that optical phonon scattering dominated mechanism Al2O3/AlN/ MIS-HEMTs. Optical energy 74 77 meV were obtained respectively.

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