Gate Recessed Quasi-Normally OFF Al 2 O 3 /AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
作者： Ting-En Hsieh , Edward Yi Chang , Yi-Zuo Song , Yueh-Chin Lin , Huan-Chung Wang
关键词: Breakdown voltage 、 High-electron-mobility transistor 、 Materials science 、 Layer (electronics) 、 Optoelectronics 、 Threshold voltage 、 Passivation 、 Current density 、 Atomic layer deposition 、 Hysteresis
摘要: In this letter, a gate recessed normally OFF AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using Al 2 O 3 /AlN stack gate insulator is presented. The trapping effect of Al 2 …
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