Low Interface Trap Densities and Enhanced Performance of AlGaN/GaN MOS High- Electron Mobility Transistors Using Thermal Oxidized Y 2 O 3 Interlayer
作者： Chongnan Liao , Xuming Zou , Chun-Wei Huang , Jingli Wang , Kai Zhang
关键词:
摘要: AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with Y 2 O 3 interlayer have been investigated to improve the interface quality. With the HfO 2 /Y …
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