The gamma irradiation responses of yttrium oxide capacitors and first assessment usage in radiation sensors

摘要: Abstract Co-60 gamma irradiation responses of the Y 2 O 3 MOS capacitors were investigated, and initial assessment dielectrics used in radiation sensors was discussed. We analyzed effects applied from flat-band mid-gap voltage shifts, also capacitance–voltage measurements obtained before after irradiation. It has been observed that measured capacitance is almost constant with basic modification flat band shifts toward more positive voltages due to negative charge accumulation, thanks trap centers capacitors. The reason trapping devices structure may be attributed ionized Yttrium atoms cluster oxygen vacancies occurred by Also, a linear dose relation observed, sensitivity found 10.8 ± 0.43 mV/Gy for calculated five different capacitors, which sensitive than conventional SiO dielectric layers. higher probably high trapped efficiency dielectrics. On other hand, generated oxide traps densities increase while interface state density trend varies This behavior states passivation layer semiconductor. accumulation order 10 –10 11 cm −2 given range. did not cause any significant device degradation through its operation. Consequently, does significantly affect Especially, system performance sensitivity, promising future gate material candidate