ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors
作者： Yuvaraj Dora , Sooyeon Han , Dmitri Klenov , Peter J. Hansen , Kwang-soo No
DOI: 10.1116/1.2167991
关键词: Passivation 、 Materials science 、 Permittivity 、 Wide-bandgap semiconductor 、 Optoelectronics 、 Dielectric 、 Field-effect transistor 、 High-electron-mobility transistor 、 Gate dielectric 、 Sapphire
摘要: We investigated the suitability of ZrO2 as a high-k dielectric for GaN material systems. Thin Zr films (4nm) were deposited by electron-beam evaporation at room temperature on n-type and Al0.22Ga0.78N(29nm)∕GaN high electron mobility transistor (HEMT) structures. The Zr-coated samples subsequently oxidized temperatures in range 200–400 °C an ozone environment. Atomic force microscopy studies after oxidation show that forms conformal layer underlying template. Cross-section transmission showed little intermixing with AlGaN∕GaN. relative constant was determined to be 23. In comparison HEMTs bare gates (no between gate metal AlGaN), two three order magnitude reduction leakage current. Optimization HEMT process sapphire substrates under yielded devices powers 3.8W∕mm 58% power-added eff...
scitation.org
aip.org
sci-hub.se 参考文章(18)
B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, J. Han, Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. ,vol. 80, pp. 1661- 1663 ,(2002) , 10.1063/1.1455692
M. Asif Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, M. S. Shur, AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates Applied Physics Letters. ,vol. 77, pp. 1339- 1341 ,(2000) , 10.1063/1.1290269
P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, Electrical characterization of GaN p-n junctions with and without threading dislocations Applied Physics Letters. ,vol. 73, pp. 975- 977 ,(1998) , 10.1063/1.122057
Shriram Ramanathan, Paul C. McIntyre, Supratik Guha, Evgeni Gusev, Charge trapping studies on ultrathin ZrO2 and HfO2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation Applied Physics Letters. ,vol. 84, pp. 389- 391 ,(2004) , 10.1063/1.1636532
G. D. Wilk, R. M. Wallace, J. M. Anthony, High-κ gate dielectrics: Current status and materials properties considerations Journal of Applied Physics. ,vol. 89, pp. 5243- 5275 ,(2001) , 10.1063/1.1361065
Shriram Ramanathan, Chang-Man Park, Paul C. McIntyre, Electrical properties of thin film zirconia grown by ultraviolet ozone oxidation Journal of Applied Physics. ,vol. 91, pp. 4521- 4527 ,(2002) , 10.1063/1.1459103
E. J. Miller, X. Z. Dang, E. T. Yu, Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors Journal of Applied Physics. ,vol. 88, pp. 5951- 5958 ,(2000) , 10.1063/1.1319972
Peter J. Hansen, Yutaka Terao, Yuan Wu, Robert A. York, Umesh K. Mishra, J. S. Speck, LiNbO3 thin film growth on (0001)-GaN Journal of Vacuum Science & Technology B. ,vol. 23, pp. 162- 167 ,(2005) , 10.1116/1.1850106
J. Shappir, A. Anis, I. Pinsky, Investigation of MOS capacitors with thin ZrO 2 layers and various gate materials for advanced DRAM applications IEEE Transactions on Electron Devices. ,vol. 33, pp. 442- 449 ,(1986) , 10.1109/T-ED.1986.22510
R. Mehandru, B. Luo, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation Applied Physics Letters. ,vol. 82, pp. 2530- 2532 ,(2003) , 10.1063/1.1567051