AlGaN/GaN E-mode MOS-HEMT Using Atomic-Layer-Deposited HfLaO x as Gate Dielectric

摘要: In this paper, we report GaN MOS-HEMTs with high quality atomic-layer-deposited HfLaO x as gate dielectric. The threshold voltage of the recessed MOS-HEMT can be enhanced from -6.2 V to 0.8 V. E-mode exhibits ideal subthreshold swing $\sim ~66$ mV/dec and on-off ratio $1.2\times 10^{10}.$ Conductance method has been applied reveal interface trap density $D_{\mathrm {it}}$ distribution between high-k/III-N interface. Effective mobility D-mode are $1958\,\mathrm{cm}^{2}/V \cdot\mathrm{s}$ $1483\,\mathrm{cm}^{2}/\mathrm{V} \cdot \mathrm{s}$, respectively. A breakdown 840 was achieved, thanks suppressed leakage. specific on-resistance device is 1.86 $\text{m}\omega \mathrm{cm}^{2}$, which results in power figure merit (BV2/R on,sp ) 380 MW/cm2.