Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment
作者： N. V. Nguyen , Oleg A. Kirillov , W. Jiang , Wenyong Wang , John S. Suehle
DOI: 10.1063/1.2976676
关键词:
摘要: The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most technologically important parameters. We report offsets Al/Al2O3/GaAs structure and effect GaAs surface treatment. energy barrier at Al2O3 sulfur-passivated interface found to be 3.0±0.1 eV whereas for unpassivated or NH4OH-treated 3.6 eV. At Al/Al2O3 interface, all samples yield same height 2.9±0.2 eV. With a gap 6.4±0.05 eV Al2O3, alignments both interfaces are established.
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