Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2
作者： V. V. Afanas’ev , M. Badylevich , A. Stesmans , G. Brammertz , A. Delabie
DOI: 10.1063/1.3021374
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摘要: Band alignment at the interfaces of (100)GaAs with Al2O3 and HfO2 grown using atomic layer deposition is determined internal photoemission photoconductivity measurements. Though inferred conduction valence band offsets for both insulators were found to be close or larger than 2 eV, interlayer by concomitant oxidation GaAs reduces barrier electrons approximately 1 eV. The latter may pose significant problems associated electron injection from into oxide.
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sci-hub.se 参考文章(11)
V. V. Afanas’ev, A. Stesmans, M. Passlack, N. Medendorp, Band offsets at the interfaces of GaAs(100) with GdxGa0.4-xO0.6 insulators Applied Physics Letters. ,vol. 85, pp. 597- 599 ,(2004) , 10.1063/1.1771805
E. O’Connor, R. D. Long, K. Cherkaoui, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, P. K. Hurley, B. Brennan, G. Hughes, S. B. Newcomb, In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric Applied Physics Letters. ,vol. 92, pp. 022902- ,(2008) , 10.1063/1.2829586
V. V. Afanasʹev, Internal Photoemission Spectroscopy: Principles and Applications ,(2008)
Advanced Gate Stacks for High-Mobility Semiconductors Advanced Gate Stacks for High-Mobility Semiconductors 1st. pp. 383- 383 ,(2007) , 10.1007/978-3-540-71491-0
V. V. Afanas’ev, A. Stesmans, R. Droopad, M. Passlack, L. F. Edge, D. G. Schlom, Electron energy barriers at interfaces of GaAs(100) with LaAlO3 and Gd2O3 Applied Physics Letters. ,vol. 89, pp. 092103- ,(2006) , 10.1063/1.2338893
G. Seguini, M. Perego, S. Spiga, M. Fanciulli, A. Dimoulas, Conduction band offset of HfO2 on GaAs Applied Physics Letters. ,vol. 91, pp. 192902- ,(2007) , 10.1063/1.2805811
N. V. Nguyen, Oleg A. Kirillov, W. Jiang, Wenyong Wang, John S. Suehle, P. D. Ye, Y. Xuan, N. Goel, K.-W. Choi, Wilman Tsai, S. Sayan, Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment Applied Physics Letters. ,vol. 93, pp. 082105- ,(2008) , 10.1063/1.2976676
Valery V. Afanas'ev, Chapter 4 – Internal Photoemission Spectroscopy Methods Internal Photoemission Spectroscopy#R##N#Principles and Applications. pp. 67- 106 ,(2008) , 10.1016/B978-008045145-9.50007-1
S. Yokoyama, M. Hirose, Y. Osaka, T. Sawada, H. Hasegawa, Internal photoemission in the anodic oxide/GaAs interface Applied Physics Letters. ,vol. 38, pp. 97- 99 ,(1981) , 10.1063/1.92269
V. V. Afanas’ev, A. Stesmans, Internal photoemission at interfaces of high-κ insulators with semiconductors and metals Journal of Applied Physics. ,vol. 102, pp. 081301- ,(2007) , 10.1063/1.2799091