Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates
作者： Azusa N. Hattori , Fumio Kawamura , Masashi Yoshimura , Yasuo Kitaoka , Yusuke Mori
DOI: 10.1016/J.SUSC.2010.04.004
关键词: Gallium nitride 、 Crystallography 、 Reflection high-energy electron diffraction 、 Wet cleaning 、 Chemical engineering 、 Etching (microfabrication) 、 Epitaxy 、 Materials science 、 Annealing (metallurgy) 、 Wafer 、 Low-energy electron diffraction
摘要: Abstract We studied the procedure of cleaning GaN(0001) substrate surfaces by wet etching and subsequent annealing in ultrahigh vacuum for two different types freestanding GaN wafers: hydride vapor phase epitaxy (HVPE) crystal Na flux liquid (LPE) wafers. A flat surface containing GaN(0001)2 × 2 reconstruction was successfully achieved on both HVPE LPE HF at ∼ 550 °C but not HCl, NaOH, HNO 3 .
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