An in situ examination of atomic layer deposited alumina/InAs"100… interfaces
作者： A. P. Kirk , M. Milojevic , J. Kim , R. M. Wallace
DOI: 10.1063/1.3432749
关键词: Layer (electronics) 、 X-ray photoelectron spectroscopy 、 Inorganic chemistry 、 Atomic layer deposition 、 Chemical state 、 Arsenic 、 Materials science 、 Chemical vapor deposition 、 Passivation 、 Indium 、 Analytical chemistry
摘要: Undoped InAs(100) wafers were either passivated with sulfur from a (NH4)2Sx solution or etched NH4OH and then characterized monochromatic x-ray photoelectron spectroscopy (XPS) before after in situ deposition of Al2O3 by atomic layer deposition. Sulfur passivation minimized oxidation. Trimethyl aluminum (TMA) exposure reduced trivalent indium arsenic oxidation states. The In1+ chemical state persisted while elemental remained at the Al2O3/InAs interface prior to TMA possibly mixture As–As As–Al bonds present afterwards. In 3d5/2 peak line shape bulk InAs differed previous XPS experiments on epitaxial InxGa1−xAs.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(24)
Byungha Shin, Donghun Choi, James S. Harris, Paul C. McIntyre, Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators Applied Physics Letters. ,vol. 93, pp. 052911- ,(2008) , 10.1063/1.2966357
M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, H. C. Kim, E. M. Vogel, J. Kim, R. M. Wallace, Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces Applied Physics Letters. ,vol. 93, pp. 252905- ,(2008) , 10.1063/1.3054348
M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, H. C. Kim, E. M. Vogel, J. Kim, R. M. Wallace, Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces Applied Physics Letters. ,vol. 93, pp. 202902- ,(2008) , 10.1063/1.3033404
F. S. Aguirre-Tostado, M. Milojevic, K. J. Choi, H. C. Kim, C. L. Hinkle, E. M. Vogel, J. Kim, T. Yang, Y. Xuan, P. D. Ye, R. M. Wallace, S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates Applied Physics Letters. ,vol. 93, pp. 061907- ,(2008) , 10.1063/1.2961003
C. L. Hinkle, M. Milojevic, E. M. Vogel, R. M. Wallace, The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding Applied Physics Letters. ,vol. 95, pp. 151905- ,(2009) , 10.1063/1.3249577
J. Ashley Taylor, An XPS study of the oxidation of AlAs thin films grown by MBE Journal of Vacuum Science and Technology. ,vol. 20, pp. 751- 755 ,(1982) , 10.1116/1.571450
J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, Brian Keyes, A. E. Kibbler, Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces Applied Physics Letters. ,vol. 55, pp. 1208- 1210 ,(1989) , 10.1063/1.101656
S Doniach, M Sunjic, Many-electron singularity in X-ray photoemission and X-ray line spectra from metals Journal of Physics C: Solid State Physics. ,vol. 3, pp. 285- 291 ,(1970) , 10.1088/0022-3719/3/2/010
Johnny C. Ho, Alexandra C. Ford, Yu-Lun Chueh, Paul W. Leu, Onur Ergen, Kuniharu Takei, Gregory Smith, Prashant Majhi, Joseph Bennett, Ali Javey, Nanoscale doping of InAs via sulfur monolayers Applied Physics Letters. ,vol. 95, pp. 072108- ,(2009) , 10.1063/1.3205113
F. S. Aguirre-Tostado, M. Milojevic, C. L. Hinkle, E. M. Vogel, R. M. Wallace, S. McDonnell, G. J. Hughes, Indium stability on InGaAs during atomic H surface cleaning Applied Physics Letters. ,vol. 92, pp. 171906- ,(2008) , 10.1063/1.2919047