Study on the response of InAs nanowire transistors to H2O and NO2

摘要: Abstract Through studying the transfer curve of field effect transistors (FETs) and current response at various gate voltages, we observe that adsorption H2O vapor NO2 introduce opposite to performance InAs nanowire (NW) FETs compared with in vacuum. Although hysteresis increases both gases, threshold voltage shifts negatively positively NO2/N2 gas due different mechanisms. The transconductance field-effect mobility devices do not change for sweeping directions forward vacuum, probably InOx layer covering NW. Importantly, can be modulated by voltage. Analysis suggests is increase electron density, while decrease density channel.