Modeling of n-InAs metal oxide semiconductor capacitors with high-κ gate dielectric
作者： A. S. Babadi , E. Lind , L. E. Wernersson
DOI: 10.1063/1.4903520
关键词:
摘要: A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured were evaluated with a full equivalent circuit model, including both majority minority carriers, as well interface border traps, formulated narrow band gap metal-oxide-semiconductor capacitors. By careful determination of trap densities, distribution traps across the oxide thickness, taking into account bulk semiconductor response, it shown that response has strong effect capacitances. Due to bandgap InAs, there can be large surface concentration electrons holes even in depletion, so charge treatment necessary.
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